? semiconductor components industries, llc, 2010 april, 2010 ? rev. 3 1 publication order number: nstb60bdw1t1/d NSTB60BDW1T1G pnp general purpose and npn bias resistor transistor combination ? simplifies circuit design ? reduces board space ? reduces component count ? available in 8 mm, 7 inch/3000 unit tape and reel ? esd rating ? human body model: class 1b esd rating ? machine model: class b ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) rating symbol q 1 q 2 unit collector-emitter voltage v ceo ? 50 50 vdc collector-base voltage v cbo ? 50 50 vdc emitter ? base voltage v ebo ? 6.0 5.0 vdc collector current ? continuous i c ? 150 150 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 187 (note 1) 256 (note 2) 1.5 (note 1) 2.0 (note 2) mw mw/ c thermal resistance ? junction-to-ambient r ja 670 (note 1) 490 (note 2) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 250 (note 1) 385 (note 2) 2.0 (note 1) 3.0 (note 2) mw mw/ c thermal resistance ? junction-to-ambient r ja 493 (note 1) 325 (note 2) c/w thermal resistance ? junction-to-lead r jl 188 (note 1) 208 (note 2) c/w junction and storage temperature t j , t stg ? 55 to +150 c 1. fr ? 4 @ minimum pad 2. fr ? 4 @ 1.0 x 1.0 inch pad sot ? 363 case 419b style 1 marking diagram q 1 r 2 r 1 q 2 (4) (5) (6) (1) (2) (3) 1 2 3 6 5 4 device package shipping ? ordering information NSTB60BDW1T1G sot ? 363 (pb ? free) 3000/tape & reel http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 71 m 1 6 71 = device code m = date code* = pb ? free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location.
NSTB60BDW1T1G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit q 1 collector-base breakdown voltage (i c = ? 50 adc, i e = 0) v (br)cbo ? 50 ? ? vdc collector-emitter breakdown voltage (i c = ? 1.0 madc, i b = 0) v (br)ceo ? 50 ? ? vdc emitter ? base breakdown voltage (i e = ? 50 adc, i e = 0) v (br)ebo ? 6.0 ? ? vdc collector ? base cutoff current (v cb = ? 50 vdc, i e = 0) i cbo ? ? ? 0.1 a emitter ? base cutoff current (v eb = ? 6.0 vdc, i b = 0) i ebo ? ? ? 0.1 a collector-emitter saturation voltage (i c = ? 50 madc, i b = ? 5.0 madc) (note 3) v ce(sat) ? ? ? 0.5 vdc dc current gain (v ce = ? 10 v, i c = ? 5.0 ma) (note 3) h fe 120 ? 560 ? transition frequency (v ce = ? 12 vdc, i c = ? 2.0 madc, f = 100 mhz) f t ? 140 ? mhz output capacitance (v cb = ? 12 vdc, i e = 0 adc, f = 1.0 mhz) c ob ? 3.5 ? pf q 2 collector-base breakdown voltage (i c = 50 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (i c = 1.0 ma, i b = 0) (note 3) v (br)ceo 50 ? ? vdc collector ? base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector ? emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter ? base cutoff current (v eb = 6.0 v, i c = 0) i ebo ? ? 0.13 madc collector-emitter saturation voltage (i c = 10 ma, i b = 5.0 ma) (note 3) v ce(sat) ? ? 0.25 vdc dc current gain (v ce = 10 v, i c = 5.0 ma) (note 3) h fe 80 ? ? output voltage (on) (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ) (note 3) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) (note 3) v oh 4.9 ? ? vdc input resistor (note 3) r1 15.4 22 28.6 k resistor ratio (note 3) r2/r1 1.70 2.13 2.55 3. pulse test: pulse width < 300 s, duty cycle < 2.0%
NSTB60BDW1T1G http://onsemi.com 3 typical electrical characteristics ? pnp transistor 2.0 1.5 1.0 0.2 0.3 0.5 0.7 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 i c , collector current (madc) figure 1. normalized dc current gain h fe , normalized dc current gain v ce = -10 v t a = 25 c -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 -0.1 i c , collector current (madc) figure 2. ?saturation? and ?on? voltages v, voltage (volts) t a = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce(sat) @ i c /i b = 10 400 20 30 40 60 80 100 200 300 i c , collector current (madc) figure 3. current ? gain ? bandwidth product f t , current-gain ? bandwidth product (mhz) c, capacitance (pf) 10 1.0 2.0 3.0 5.0 7.0 -0.4 v r , reverse voltage (volts) figure 4. capacitances t a = 25 c c ib c ob r b , base spreading resistance (ohms) 150 140 130 120 110 100 i c , collector current (madc) figure 5. output admittance -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 v ce = -10 v t a = 25 c -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 1.0 i c , collector current (madc) figure 6. base spreading resistance v ce = -10 v f = 1.0 khz t a = 25 c -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 v ce = -10 v f = 1.0 khz t a = 25 c -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 0.01 0.03 0.05 0.1 0.3 0.5 h , output admittance (ohms) ob 150
NSTB60BDW1T1G http://onsemi.com 4 typical electrical characteristics ? npn transistor 1 0.01 0.1 80 010203040506070 i c , collector current (ma) figure 7. maximum collector voltage versus collector current i c /i b = 10 1000 100 10 1 1 i c , collector current (ma) figure 8. dc current gain t a = 85 c 4 0 0.5 1 1.5 2 3 3.5 v r , reverse bias voltage (v) figure 9. output capacitance 100 0.01 0.1 1 10 0 v in , input voltage (v) figure 10. output current versus input voltage figure 11. input voltage versus output current 10 100 f = 1 mhz i e = 0 a t a = 25 c 0102030405060 2468101214 100 i c , collector current (ma) 010 60 0.1 1 10 2.5 v ce(sat) maximum collector voltage (v) t a = ? 40 c 25 c 85 c h fe , dc current gain v ce = 10 v 25 c ? 40 c c ob , capacitance (pf) t a = 85 c 25 c ? 40 c v o = 5 v 20 30 40 50 v in , input voltage (v) t a = ? 40 c 25 c 85 c i c , collector current (ma) v o = 0.2 v
NSTB60BDW1T1G http://onsemi.com 5 package dimensions sot ? 363 / sc ? 88/sc70 ? 6 case 419b ? 02 issue w style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* sc ? 88/sc70 ? 6/sot ? 363 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 nstb60bdw1t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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